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首页> 外文期刊>Journal of Electronic Materials >Effects of Electrical Current and External Stress on the Electromigration of Intermetallic Compounds Between the Flip-Chip Solder and Copper Substrate
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Effects of Electrical Current and External Stress on the Electromigration of Intermetallic Compounds Between the Flip-Chip Solder and Copper Substrate

机译:电流和外部应力对倒装芯片焊料和铜基材金属间化合物电迁移的影响

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摘要

This study investigated the effects of electric current and external stress on electromigration of intermetallic compounds (IMC) between solder and copper substrate. Different samples were tested under three different sets of conditions: (1) thermal aging only, (2) thermal aging with electric current ,where resistivity changes were measured using four-point probe measurements, (3) thermal aging with electric current and external stress provided using a four-point bending apparatus. The micro-structural changes in the samples were observed. The results were closely examined; particularly the coupling effect of electric current and external stress to elucidate the electromigration mechanism, as well as the formation of IMC in the samples. For thermal-aging-only samples, the IMC growth mechanism was controlled by grain boundary diffusion. Meanwhile, for thermal aging and applied electric current samples, the IMC growth mechanism was dominated by volume diffusion and interface reaction. Lastly, the IMC growth mechanism in the electric current and external stress group was dominated by grain boundary diffusion with grain growth. The results reveal that the external stress/strain and electric current play a significant role in the electromigration of copper-tin IMC. The samples exposed to tensile stress have reduced electromigration, while those subjected under compressive stress have enhanced electromigration.
机译:该研究研究了电流和外部应力对焊料和铜基材金属间化合物(IMC)电迁移的影响。在三种不同的条件下测试不同的样品:(1)仅热老化,(2)具有电流的热老化,其中使用四点探针测量测量电阻率变化,(3)热老化,电流和外部应力。提供四点弯曲设备。观察样品中的微结构变化。结果仔细检查了;特别是电流和外部应力的耦合效果,以阐明电迁移机制,以及在样品中形成IMC的形成。对于仅热老化的样品,IMC生长机制由晶界扩散控制。同时,对于热老化和施加的电流样品,IMC生长机理由体积扩散和界面反应主导。最后,电流和外部应激组中的IMC生长机制由晶界扩散与晶粒生长构成。结果表明,外部应力/应变和电流在铜锡IMC的电迁移中发挥着重要作用。暴露于拉伸应力的样品具有降低的电迁移,而在压缩应力下进行的那些具有增强的电迁移。

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