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首页> 外文期刊>Journal of Electronic Materials >Thermal, Structural, AC Conductivity, and Dielectric Properties of Ethyl-2-amino-6-ethyl-5-oxo-4-(3-phenoxyphenyl)-5,6-dihydro-4H-pyrano[3,2-c]quinoline-3-carboxylate Thin Films
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Thermal, Structural, AC Conductivity, and Dielectric Properties of Ethyl-2-amino-6-ethyl-5-oxo-4-(3-phenoxyphenyl)-5,6-dihydro-4H-pyrano[3,2-c]quinoline-3-carboxylate Thin Films

机译:乙基-2-氨基-6-乙基-5-氧代-4-(3-苯氧基苯基)-5,6-二氢-4H-吡喃[3,2-C]喹啉的热,结构,交流电导率和介电性能和介电性能 -3-羧酸薄膜

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Thermal, structural, alternating-current (AC) conductivity (sigma (AC)), and dielectric properties of ethyl-2-amino-6-ethyl-5-oxo-4-(3-phenoxyphenyl)-5,6-dihydro-4H-pyrano[3,2-c]quinoline-3-carboxylate (HPQC) thin films have been studied. Thermogravimetry analysis and differential scanning calorimetry confirmed the thermal stability of HPQC over a wide temperature range. Fourier-transform infrared spectroscopy and x-ray diffraction analysis were carried out on HPQC in powder form and as-deposited thin film. The crystal system and space group type were determined for HPQC in powder form. The AC conductivity and dielectric properties were determined in the frequency range from 0.5 kHz to 5 MHz and temperature range from 296 K to 443 K. The AC electrical conduction of HPQC thin film was found to be governed by the small-polaron tunneling mechanism. The polaron hopping energy (W (H)), tunneling distance (R), and density of states (N) near the Fermi level were determined as functions of temperature and frequency. The dielectric properties of HPQC thin film were studied by analysis of Nyquist diagrams, the dissipation factor (tan delta), and real (epsilon') and imaginary (epsilon aEuro(3)) parts of the dielectric constant.
机译:热,结构,交流(AC)电导率(Sigma(AC))和乙基-2-氨基-6-乙基-5-氧代-4-(3-苯氧基苯基)-5,6-二氢 - 的介电性质。研究了4H-吡喃[3,2-C]喹啉-3-羧酸薄膜(HPQC)薄膜。热重量分析和差示扫描量热法证实了HPQC在宽温度范围内的热稳定性。在粉末形式和沉积的薄膜中对HPQC进行傅里叶变换红外光谱和X射线衍射分析。在粉末形式中测定晶体系统和空间组型。在0.5kHz至5MHz的频率范围内测定AC电导率和电介质性质,并且从296k至443k的温度范围内测定。发现HPQC薄膜的AC电导通过小极化型隧道机构控制。在FERMI水平附近的极化跳跃能量(W(H)),隧道距离(R)和态(N)的密度被确定为温度和频率的功能。通过分析奈奎斯特图,耗散因子(Tan Delta)和真实(epsilon')和假想(εaeuro(3))部分的介电常数进行研究了HPQC薄膜的介电性能。

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