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首页> 外文期刊>Journal of Electroanalytical Chemistry: An International Journal Devoted to All Aspects of Electrode Kinetics, Interfacial Structure, Properties of Electrolytes, Colloid and Biological Electrochemistry >Fabrication of copper nanowires via electrodeposition in anodic aluminum oxide templates formed by combined hard anodizing and electrochemical barrier layer thinning
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Fabrication of copper nanowires via electrodeposition in anodic aluminum oxide templates formed by combined hard anodizing and electrochemical barrier layer thinning

机译:通过组合硬阳极氧化和电化学阻挡层稀化,通过电沉积在阳极氧化铝氧化物模板中的电沉积制造铜纳米线

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AbstractAnodic aluminum oxide was formed by employing mild and hard anodizing in sulfuric acid followed by mild anodizing in oxalic acid without oxide removal in-between at 40 and 45V. Such multi-step anodizing, combining hard anodizing in sulfuric acid with mild anodizing in oxalic acid allowed to form a highly-ordered nanoporous template with a barrier layer at the pore bottoms thin enough for further processing. Four different conditions of electrochemical barrier layer thinning, with varied voltage steps and their time durations, were investigated. Optimized conditions allowed to provide conductivity at the pore bottoms and made the nanoporous oxide templates suitable for electrodeposition. It was found that the most effective barrier layer thinning approach employs voltage steps Un+1=0.75·Unwith each step (n) being 10s long. To check applicability of the formed templates, copper electrodeposition from sulfate-borate bath was done. Copper nanowires with average length of about 14–16μm and diameter of about 35–40nm were obtained by using through-hole AAO templates.Graphical abstractDisplay Omitted
机译:<![CDATA [ 抽象 通过使用温和和硬阳极氧化在没有氧化物中的草酸中的温和阳极氧化,形成阳极氧化铝氧化物。在40和45V之间去除在40和45V之间。这种多步阳极氧化,将硬氧化在硫酸中与温和阳极氧化在草酸中,使得在孔底部的孔底部以足够薄的屏障层形成高度有序的纳米多孔模板以进一步处理。研究了四种不同条件的电化学阻挡层,具有变化的电压步骤及其时间持续时间。优化的条件允许在孔底部提供电导率,并使纳米多孔氧化物模板制成适合电沉积。发现最有效的阻挡层变薄方法采用电压步骤U N + 1 = 0.75·U N < / ce:inf>每个步骤(n)为10s长。为了检查所形成模板的适用性,完成硫酸盐硼酸盐的铜电沉积。通过使用通孔AAO模板获得平均长度为约14-16μm和直径约35-40nm的铜纳米线。 < CE:抽象XMLNS:CE =“http://www.elsevier.com/xml/common/dtd”xmlns =“http://www.elsevier.com/xml/ja/dtd”id =“ab0010”class = “图形”XML:lang =“en”查看=“全部”> 图形抽象 显示省略

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