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Fabrication of copper nanowires by eelectrodeposition uusing anodic aluminum oxide template

机译:使用阳极氧化铝模板通过电沉积制备铜纳米线

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In this paper, effects of potential and output mode on copper nanowire arrays via porous anodic aluminum oxide template by electrochemical deposition method have been investigated. The copper nanowire arrays were fabricated using electrochemical deposition in 0.2 M CuSO4 by different potential modes including direct current (DC) and pulse. The nanostructure, morphology, chemical composition and phase of copper nanowire arrays were examined by scanning electron microscopy and grazing incidence X-ray diffraction. The results indicated that the copper nanowire arrays deposited by pulse mode revealed high aspect ratio despite high potential while that at higher DC potential was rather short due to the hydrogen generation in reduction reaction. The short duty cycle of 50% in pulse deposition can release the produced hydrogen for good nanowires formation.
机译:本文研究了电沉积方法对多孔阳极氧化铝模板对铜纳米线阵列的电势和输出方式的影响。铜纳米线阵列是通过在0.2 M CuSO4中通过包括直流电(DC)和脉冲的不同电势模式进行电化学沉积而制成的。铜纳米线阵列的纳米结构,形态,化学组成和相通过扫描电子显微镜和掠入射X射线衍射进行了检查。结果表明,尽管具有高电势,但通过脉冲模式沉积的铜纳米线阵列仍显示出高纵横比,而由于还原反应中产生的氢,在高直流电势下,铜纳米线阵列却很短。脉冲沉积中50%的短占空比可以释放产生的氢,从而形成良好的纳米线。

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