Effects of anodization process of aluminum oxide template fabrication on selective growth of Si nanowire arrays

摘要

We report on effects of anodization process of anodic aluminum oxide (AAO) template on selective growth of Si nanowires using gas source molecular beam epitaxy. By switching off the anodization currents at several points, the structure of Si surface was altered, which was critical factor for the Si nanowire array growth. With reasonable switched-off point of anodization current at R of 10%, the selective growth of Si nanowire growth was favorable and 1-mu m-long Si nanowire arrays were successfully grown. It was interesting that their structures were epitaxial structures; whereas, long anodization of AAO was found to be unfavorable for growth of Si nanowires due to anodization of Si surface. It caused the density of Si nanowire arrays to be modest and their structures were polycrystal structure. (C) 2015 The Japan Society of Applied Physics