xCu 1-x) 2ZnSnS 4 thin films synthesised via solution route]]>

摘要

AbstractSilver (Ag) has been introduced in the quaternary compound Cu2ZnSnS4synthesised via solution chemistry. Thin films of the resulting pentanary alloys (AgxCu1-x)2ZnSnS4(0?≤?x?≤?1) show remarkable change in their microstructure and electronic properties with the increasing Ag content. Going from Cu2ZnSnS4(x?=?0) to Ag2ZnSnS4(x?=?1), the grain size increased from 0.13 to 2?μm which could be attributed to the liquid assisted grain growth mechanism. The optical band gap increased from 1.5 to 2.0?eV due to the influence of d-orbitals of Ag atoms on the valence band edge. The charge carrier density decreased by two orders of magnitude with only 4 atomic % Ag (x?=?0.04) incorporated in the films, which can be attributed to the reduction in the density of CuZnand VCupoint defects with Ag atoms occupying the Cu-sublattice sites. Also, with increasing Ag content the lattice parametersaandbincreased from 5.42 to 5.82??, whereas there was negligible change in the lattice parameterc.Highlights?A simple solution route for the fabrication of (AgxCu1-x)2ZnSnS4thin films.?Grain size, optical band gap dramatically increase with the increased Ag amount.?Lattice constant a (and b) increases with the increase Ag amount.?Tuning band gap, charge-carrier density, mobility of CZTS thin film.]]>