Ultrasensitive all-solution-processed field-effect transistor based perovskite photodetectors with sol-gel SiO2 as the dielectric layer

摘要

In this work, we present a high-performance field-effect transistor (FET) based perovskite photodetector by using a sol-gel SiO2 layer as the dielectric layer. The FET-based perovskite photodetector Al(Gate)/SiO2/CH3NH3PbI3/Au(Drain, Source) shows a high responsivity of 10.72 A/W and a high specific detectivity of 6.2 x 10(13) Jones under 0.37 mu W/cm2 532 nm laser, and the underlain mechanism is discussed. Therefore, this kind of all solution-processed method provides a promising way to fabricate high-performance perovskite-based optoelectronic devices on flexible substrates. (C) 2017 Elsevier B.V. All rights reserved.