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Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure

机译:基于有机半导体的混合场效应晶体管和光电探测器,CSPBI3钙钛矿纳米棒双层结构

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摘要

Abstract The outstanding performances of nanostructured all-inorganic CsPbX3 (X = I, Br, Cl) perovskites in optoelectronic applications can be attributed to their unique combination of a suitable bandgap, high absorption coefficient, and long carrier lifetime, which are desirable for photodetectors. However, the photosensing performances of the CsPbI3 nanomaterials are limited by their low charge-transport efficiency. In this study, a phototransistor with a bilayer structure of an organic semiconductor layer of 2,7-dioctyl [1] benzothieno[3,2-b] [1] benzothiophene and CsPbI3 nanorod layer was fabricated. The high-quality CsPbI3 nanorod layer obtained using a simple dip-coating method provided decent transistor performance of the hybrid transistor device. The perovskite layer efficiently absorbs light, while the organic semiconductor layer acts as a transport channel for injected photogenerated carriers and provides gate modulation. The hybrid phototransistor exhibits high performance owing to the synergistic function of the photogating effect and field effect in the transistor, with a photoresponsivity as high as 4300 A W−1, ultra-high photosensitivity of 2.2 × 106, and excellent stability over 1 month. This study provides a strategy to combine the advantages of perovskite nanorods and organic semiconductors in fabrication of high-performance photodetectors.
机译:摘要光电应用中纳米结构全无机CSPBX3(X = I,BR,CL)Perovskites的突出性能可归因于它们是合适的带隙,高吸收系数和长载体寿命的独特组合,这对于光电探测器是期望的。然而,CSPBI3纳米材料的光敏性能受到它们低电荷运输效率的限制。在该研究中,制造具有2,7-二辛基的有机半导体层的双层结构的光电晶体管[1]苯并噻吩[3,2-B] [1]苯并噻吩和CSPBI3纳米棒层。使用简单的浸涂方法获得的高质量CSPBI3纳米棒层提供了混合晶体管装置的体积晶体管性能。钙钛矿层有效地吸收光,而有机半导体层用作注入光生载体的传送通道并提供栅极调制。由于晶体管中的光光电效应和场效应的协同功能,混合光电转换器具有高性能,光响应性高达4300A W-1,超高光敏性为2.2×106,并且超过1个月的稳定性优异。该研究提供了一种结合钙钛矿纳米棒和有机半导体在制造高性能光电探测器中的优点的策略。

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