...
首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Defect modification to improve field emission of ZnO NRs by coating ultrathin Pt films
【24h】

Defect modification to improve field emission of ZnO NRs by coating ultrathin Pt films

机译:通过涂覆超薄PT薄膜来改善ZnO NRS的场发射的缺陷修改

获取原文
获取原文并翻译 | 示例
           

摘要

Ultrathin platinum (Pt) films are coated on the surface of ZnO NRs grown on Fe alloy substrates and display excellent field emission performance with the turn-on field E-to as low as 0.40 V/mu m and the threshold field E-thr down to 2.62 V/mu m. By coating ultrathin Pt films on the surface of the ZnO NRs, this not only helps to modify the linear defects on the outer surface of ZnO NRs, but also suppresses random electron emission along the defect directions. At an external electric field, a large amount of electrons are transported to the top of ZnO NRs where a highly localized electric field is caused, which results in enhanced field emission. Besides, ZnO NRs grown on Fe alloy substrates have a low interfacial contact resistance and intend to reduce the barrier between the substrate and the ZnO. Meanwhile, metal Pt films can help to obtain emitting centers that ensure highly conductive paths for the electrons from the ZnO NRs towards the vacuum, which effectively decrease the barrier between the ZnO and the vacuum. Finally, a schottky contact of Fe-ZnO and matched Fermi levels of ZnO-Pt contribute to the enhanced current emission efficiency. This work may help the development of the practical electron sources and advanced devices based on ZnO field emitters. (C) 2017 Elsevier B.V. All rights reserved.
机译:超薄铂(Pt)膜涂覆在Fe合金基板上生长的ZnO NR表面上,并显示出优异的场发射性能,开启场E-to低至0.40 V / mu m,阈值场E-Thr下降到2.62 v / mu m。通过在ZnO NRS的表面上涂覆超薄Pt膜,这不仅有助于改变ZnO NRS的外表面上的线性缺陷,而且还可以抑制沿着缺陷方向的随机电子发射。在外部电场,大量电子被传送到ZnO NR的顶部,其中引起高度局部化电场,这导致了增强的场发射。此外,在Fe合金基板上生长的ZnO NR具有低界面接触电阻,并打算减少基板和ZnO之间的屏障。同时,金属Pt薄膜可以帮助获得从ZnO NRS朝向真空中的电子的高导电路径的发射中心,这有效地降低了ZnO和真空之间的屏障。最后,Fe-ZnO的肖特基接触和匹配的费米水平的ZnO-PT为增强的电流发射效率有贡献。这项工作可以帮助开发基于Zno场发射器的实用电子源和先进器件。 (c)2017年Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号