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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >First-principles study of structural, electronic, energetic and optical properties of substitutional Cu defect in Li_2B_4O_7 scintillator
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First-principles study of structural, electronic, energetic and optical properties of substitutional Cu defect in Li_2B_4O_7 scintillator

机译:LI_2B_4O_7闪烁体中取代Cu缺陷结构,电子,能量和光学性质的第一原理研究

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摘要

Quantum-mechanical effects of incorporation of the Cu ions at the Li sites in Li_2B_4O_7 crystal matrix are investigated by means of first-principles calculations on density-functional-theory level. The isolated Cu defect is considered in various charge states with objective to simulate situations of the capture of an electron or a hole. In all cases the defective crystal is computationally relaxed, Cu-O chemical bonds carefully analyzed and local structure around the defects precisely determined. It is found that the defect vastly perturbs its 0 neighborhood and the Cu itself exhibits significant off-site dislocation from initial Li position in its Cu~(1+) and Cu° charge states, while the Cu~(2+) stabilizes approximately at the Li site. Resulting defect formation energies demonstrate that the Cu~(1+) and Cu° centers are the most stable ones. Electronic structure calculations reveal that the Cu introduces its d- and s-states within the gap and their energies and occupation depend strongly on the charge state of the defect. Experimental optical absorption spectra are well reproduced by the sole Cu~(1+) defect spectra, leading to the conclusion that in the as-grown material just Cu~(1+) centers are formed, with possible presence of small concentration of the Cu~(2+) centers. In the case of irradiated material, present study predicts formation of the interstitial Cu° defects, whose presence should significantly change the optical absorption and emission of the material.
机译:通过第一原理计算研究了Li_2B_4O_7晶体基质中LI位点在Li _2B_4O_7晶体基质中的掺入Cu离子的量子力学效应。在各种电荷状态中考虑分离的Cu缺陷,目的是模拟捕获电子或孔的情况。在所有情况下,缺陷晶体在计算宽度下,Cu-O化学键仔细地分析和局部结构围绕精确确定的缺陷。结果发现,缺陷极大地渗出其0附近,Cu本身从其Cu〜(1+)和Cu°充电状态中的初始Li位置表现出显着的偏离现场位错,而Cu〜(2+)稳定在李网站。产生的缺陷形成能量表明Cu〜(1+)和Cu°中心是最稳定的。电子结构计算表明,Cu在间隙内引入其D-和S-SED,它们的能量和占用强烈地依赖于缺陷的充电状态。实验光学吸收光谱由唯一的Cu〜(1+)缺陷光谱良好再现,导致结论是,在以生长的材料中,形成Cu〜(1+)中心,可能存在小浓度的Cu 〜(2+)中心。在辐照材料的情况下,本研究预测间质Cu°缺陷的形成,其存在应显着改变材料的光学吸收和排放。

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