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机译:垂直应变诱导的点尺寸均匀性和INAS / GAASN / GAAs耦合量子点的热稳定性
Indian Inst Technol Dept Elect Engn Bombay 400076 Maharashtra India;
Indian Inst Technol Dept Elect Engn Bombay 400076 Maharashtra India;
Indian Inst Technol Dept Elect Engn Bombay 400076 Maharashtra India;
Soc Appl Microwave Engn Elect &
Res Photon Div IIT Powai Campus Bombay 400076 Maharashtra India;
Soc Appl Microwave Engn Elect &
Res Photon Div IIT Powai Campus Bombay 400076 Maharashtra India;
Indian Inst Technol Dept Mech Engn Bombay 400076 Maharashtra India;
Indian Inst Technol Dept Elect Engn Bombay 400076 Maharashtra India;
GaAsN; Coupled quantum dots; Dot size uniformity; Deep level defects; Local vibrational mode; Strain coupling; Thermal stability;
机译:垂直应变诱导的点尺寸均匀性和INAS / GAASN / GAAs耦合量子点的热稳定性
机译:单层覆盖,势垒厚度和生长速率对带有四级封端的InAlGaAs的耦合InAs / GaAs量子点异质结构光致发光的热稳定性的影响
机译:InGaAs量子阱中掩埋的InAs量子点产生的应变感应量子点的光谱特征
机译:GaAsN / GaAs间隔物耦合InAs量子点光学性质的低温研究
机译:在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
机译:消除用于制备1.3μm量子点激光器的InAs / GaAs量子点中的双峰尺寸
机译:使用InGaAs应变层的垂直耦合INAS / GaAs量子点的异常蓝色
机译:基于alGaas基复合Inalas / Inas垂直耦合量子点的注入式激光器。