机译:InGaAs量子阱中掩埋的InAs量子点产生的应变感应量子点的光谱特征
Department of Physics, University of Arkansas, 226 Physics Building, Fayetteville, Arkansas 72701, USA;
Department of Physics, University of Arkansas, 226 Physics Building, Fayetteville, Arkansas 72701, USA;
Department of Physics, University of Arkansas, 226 Physics Building, Fayetteville, Arkansas 72701, USA;
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, Kiev 03028, Ukraine;
Department of Physics, University of Arkansas, 226 Physics Building, Fayetteville, Arkansas 72701, USA;
机译:GaAs(001)/ InAs / InGaAs / GaAs自组装量子点结构中的深能级及其对量子点器件的影响
机译:GaAs(001)/ InAs / InGaAs / GaAs自组装量子点结构中的深能级及其对量子点器件的影响
机译:InGaAs亚单层量子点和InAs量子点光子晶体垂直腔面发射激光器的特性
机译:在INAS量子点之间的耦合和应变IngaAs / GaAs耦合量子阱:一种新型量子点
机译:InGaAs量子点和量子点激光器的交替分子束外延和表征。
机译:变质InAs / InGaAs和InAs / GaAs量子点结构的光电性能比较研究
机译:通过自组织各向异性应变工程在InGaAsP / InP(100)上的波长控制的多层堆叠线性InAs量子点阵列:自排序量子点晶体