机译:高纵横比单晶AlN纳米线:自由催化PVT生长和现场排放研究
Shandong Univ State Key Lab Crystal Mat Jinan 250100 Shandong Peoples R China;
Qilu Univ Technol Energy Res Inst Shandong Acad Sci Jinan 250014 Shandong Peoples R China;
Shandong Univ State Key Lab Crystal Mat Jinan 250100 Shandong Peoples R China;
Shandong Univ State Key Lab Crystal Mat Jinan 250100 Shandong Peoples R China;
Shandong Univ State Key Lab Crystal Mat Jinan 250100 Shandong Peoples R China;
Shandong Univ State Key Lab Crystal Mat Jinan 250100 Shandong Peoples R China;
Shandong Univ State Key Lab Crystal Mat Jinan 250100 Shandong Peoples R China;
Aluminum nitride nanowires; High aspect ratios; Physical vapor transport; Field-emission; Deep ultraviolet;
机译:高纵横比单晶AlN纳米线:自由催化PVT生长和现场排放研究
机译:SiC和天然AlN衬底上AlN的PVT生长初始生长阶段的比较研究
机译:多尺度模拟方法研究PVT生长的AlN晶体的分步生长
机译:通过调整径向温度梯度有效提高SiC的PVT生长过程中的单晶产率
机译:块状AlN单晶衬底上的富铝AlGaN和AlN生长
机译:单晶纳米线的初始生长:从3D成核到2D生长
机译:用CVD法合成单晶INSB纳米线及开放式系统生长机制研究