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Thermochromic, threshold switching, and optical properties of Cr-doped VO2 thin films

机译:热致变色,阈值切换和CR掺杂VO2薄膜的光学性能

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In this paper, undoped and Cr-doped VO2 thin films were fabricated and deposited onto Al2O3 substrates using a sol-gel method. Then, the effects of Cr-doping on the thermochromic, and optical properties of the thin films were investigated. Doping with Cr ions gradually increased the metal-insulator transition (MIT) temperature of the films, while the luminous transmittance (T-lum) and the sol modulation efficiency (Delta T-sol) gradually decreased. Additionally, Pt/VO2/ITO devices and Cr-doped VO2 devices were prepared to study their threshold switching (TS) properties. For devices fabricated with Cr-doped VO2 films, both the threshold voltage (Vth+) and the OFF-state current decreased as the amount of Cr doping increased. In contrast, the ON/OFF ratio increased from 10(4) to 10(5). These results provide insight into the potential for using VO2 in thermochromic, optical, and TS applications. (C) 2019 Elsevier B.V. All rights reserved.
机译:在本文中,使用溶胶 - 凝胶法制造未掺杂和Cr掺杂的VO2薄膜并沉积在Al 2 O 3底物上。 然后,研究了Cr掺杂对热致变色的影响和薄膜的光学性质。 用Cr离子掺杂逐渐增加薄膜的金属 - 绝缘体过渡(MIT)温度,而发光透射率(T-LUM)和溶胶调制效率(Delta T-溶胶)逐渐降低。 另外,准备PT / VO2 / ITO器件和CR掺杂VO2器件以研究其阈值切换(TS)性质。 对于用CR掺杂VO2薄膜制造的器件,阈值电压(Vth +)和断线电流随着CR掺杂的量而降低。 相反,开/关比从10(4)增加到10(5)增加。 这些结果提供了在热致变色,光学和TS应用中使用VO2的可能性。 (c)2019 Elsevier B.v.保留所有权利。

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