首页> 外文期刊>The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical >Growth-Induced Effects of Polarity in Molecular Crystals: Comparison of Schottky-and Markov-Type Models with Monte Carlo Simulations
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Growth-Induced Effects of Polarity in Molecular Crystals: Comparison of Schottky-and Markov-Type Models with Monte Carlo Simulations

机译:分子晶体中极性的生长诱导的影响:肖特基和马尔可夫型模型与蒙特卡罗模拟的比较

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摘要

Crowth-induced 180deg C orientational defect formation in centric and acentric organic crystals built up by polar molecules is described by Schottky-and Markov-type theories and compared to the Monte Carlo simulations. Good numerical agreement between the three approaches is obtained for a defect level lower than a few percent. From the temperature dependence of defect probability, we predict that in real materials crystallizing in a centric group, a defect level typically of a few percent or more may develop if growth occurs at elevated temperature. Observed second harmonic generation effects in organic crystal structures refined to an wR(F~2) value of a few percent are compatible with an orientational defect level on the same order. Concerning the mechanism of defect formation, healing of primary defects is likely for a realistic range of intermolecular couplings in various materials. In the case of growth upon a polar seed, the system is developing a stable configuration of polarity along one of the directions of the polar axis, whereas for the opposite direction, switching of the majority of dipoles is predicted.
机译:肖特基 - 和马尔可夫型理论描述了由极地分子构建的中心和锐孔有机晶体中的人群引起的180deg C定位缺陷形成,并与Monte Carlo模拟相比。三种方法之间的良好数值协议获得低于少量百分比的缺陷水平。从缺陷概率的温度依赖性,我们预测,在以中心结晶的实际材料中,如果在升高温度下生长,可能会产生缺陷水平或更多的缺陷水平。观察到改进的有机晶体结构的二次谐波产生效应为几个百分点的WR(F〜2)值与相同顺序的取向缺陷水平兼容。关于缺陷形成的机制,初级缺陷的愈合可能是各种材料中的分子结耦合的实际范围。在极性种子上生长的情况下,系统正在沿着极轴的方向之一开发极性的稳定配置,而对于相反的方向,预测大部分偶极子的切换。

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