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Polytype control of MoS2 using chemical bath deposition

机译:MOS2使用化学浴沉积的PolyType控制

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Molybdenum disulfide (MoS2) has a wide range of applications from electronics to catalysis. While the properties of single-layer and multilayer MoS2 films are well understood, controlling the deposited MoS2 polytype remains a significant challenge. In this work, we employ chemical bath deposition, an aqueous deposition technique, to deposit large area MoS2 thin films at room temperature. Using Raman spectroscopy and x-ray photoelectron spectroscopy, we show that the deposited MoS2 polytype can be changed from semiconducting 2H MoS2 on hydrophobic -CH3 and -CO2C6F5 terminated self-assembled monolayers (SAMs) to semimetallic 1T MoS2 on hydrophilic -OH and -COOH terminated SAMs. The data suggest that the deposition of MoS2 polytypes is controlled by the substrate surface energy. High surface energy substrates stabilize 1T MoS2 films, while 2H MoS2 is deposited on lower surface energy substrates. This effect appears to be general enabling the deposition of different MoS2 polytypes on a wide range of substrates. Published under license by AIP Publishing.
机译:二硫化钼(MOS2)具有从电子产品到催化的各种应用。虽然单层和多层MOS2膜的性质很好地理解,但控制沉积的MOS2 Polytype仍然是一个重大挑战。在这项工作中,我们采用化学浴沉积,水性沉积技术,在室温下沉积大面积MOS2薄膜。利用拉曼光谱和X射线光电子能谱,我们表明沉积的MOS2聚型可以从疏水性-CH3和-CO2C6F5端接的自组装单层(SAMS)上的半导体2H MOS2改变为亲水性-OH和-COOH的半网1T MOS2终止了Sams。数据表明MOS2多​​型的沉积由基板表面能控制。高表面能基板稳定1T MOS2薄膜,而2H MOS2沉积在下表面能衬底上。这种效果似乎是通用的,使得在宽范围的基板上能够沉积不同的MOS2聚晶。通过AIP发布在许可证下发布。

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