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Synthesis of Ag doped SnO2 thin films for the evaluation of H2S gas sensing properties

机译:用于评价H2S气体传感性能的Ag掺杂SnO2薄膜的合成

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Abstract The Tin Oxide (SnO2) based thin films doped with 1.5, 3.0 and 4.5mol% of Ag were deposited on the glass substrates using the advanced chemical spray pyrolysis technique. All the films were deposited at temperature 400°C. The crystalline structure of the samples was analyzed by X-ray diffraction (XRD). All the XRD patterns of the films showed a well-defined polycrystalline phase, fitting well with the SnO2 tetragonal rutile type structure. The optical properties of the Ag doped SnO2 films were studied using UV–Visible absorption spectroscopy. The surface morphological analysis of as-synthesized Ag doped SnO2 films have been carried out using scanning electron microscope (SEM). The sensor response was estimated by the change in the electrical resistance of the film in the absence and presence of H2S gas. The sensor response and sensitivity in relation to, operation temperature and the gas concentration have been systematically studied. A significant response (~ 1.38) and with a short response and recovery time (46s, 110s) towards 450ppm H2S at 100°C operating temperature is observed for the 3mol% Ag-doped SnO2 film. This method offers a highly promising candidate for development of materials sensors due to facile fabrication route and desirable sensing performance.
机译:<![cdata [ 抽象 氧化锡(SNO 2 )薄膜掺杂有1.5, 3.0和4.5 使用先进的化学喷雾热解技术沉积在玻璃基板上的摩尔%。将所有薄膜沉积在温度400 ℃。通过X射线衍射(XRD)分析样品的晶体结构。薄膜的所有XRD图案显示出明确定义的多晶相,与SnO 2 四方金红石型结构。使用UV可见的吸收光谱研究了AG掺杂SnO 薄膜的光学性质。使用扫描电子显微镜(SEM)进行了用掺杂的AS掺杂SnO 薄膜的表面形态分析。通过在缺乏和存在下的膜的电阻变化估计传感器响应估计H 2 S气体。有系统地研究了与操作温度和气体浓度相关的传感器响应和灵敏度。一个显着的响应(〜1.38)和短响应和恢复时间(46 s,110 s)朝向450 PPM H 2 S在100 °C为3 CE:HSP SP =“0.25”/> Mol%Ag-Doped Sno 2 薄膜。该方法为材料传感器的开发提供了高度有前途的候选者,因为易于制造路线和所需的传感性能。

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