H2O The method for etching of magnetic thin films using H2O gas

摘要

The present invention relates to a method for patterning a magnetic thin film with a mask and masking the same (step 1); 10 to 50% by volume of H ₂ O gas, and 50 to 90% by volume of an alkane-based gas into a plasma (step 2); And etching the magnetic thin film masked in step 1 using the plasma generated in step 2 (step 3). The method of etching a magnetic thin film using H ₂ O gas according to the present invention is a new method of etching by using H ₂ O gas which is not corrosive and very inexpensive and is environment friendly compared with the conventional etching method, The etching rate and the high anisotropic etching profile can be applied to all devices and devices in which the magnetic thin film is used, and are particularly effective in forming fine patterns.