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首页> 外文期刊>Physical chemistry chemical physics: PCCP >Adsorption and dissociation of O-2 on MoO2((1)over-bar11) surfaces: a DFT study
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Adsorption and dissociation of O-2 on MoO2((1)over-bar11) surfaces: a DFT study

机译:O-2对MOO2((1)覆盖物)表面的吸附和解离:DFT研究

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The adsorption and dissociation of O-2 on MoO2((1) over bar 11) surfaces were studied by density functional theory (DFT). The results show that O-2 molecules prefer to be adsorbed on the five-coordinated Mo top sites. Density of states analysis shows strong hybridization of Mo 4d orbitals and O 2p orbitals in the Mo-O bond. Clean MoO2 slabs and slabs with O-2 adsorption are metallic conductors, whereas the surface with high O atom coverage is reconstructed and becomes a semiconductor. Surface Mo atoms without adsorbed O or O-2 are spin-polarized. The oxygen adsorption shows the ability to reduce the spin of surface Mo atoms. The adsorption energy of the O-2 and O atoms decreases as coverage increases. The transition states of O-2 dissociation were located. The energy barriers for O-2 dissociation on the five-coordinated and four-coordinated Mo top sites are 0.227 eV and 0.281 eV, respectively.
机译:通过密度泛函理论(DFT)研究了O-2 ON MOO2((1)上)表面的吸附和解离。 结果表明,O-2分子更喜欢吸附在五个协调的MO顶部位点上。 状态分析的密度显示Mo 4D轨道和MO-O键中的Mo 4D轨道和O 2P轨道的强杂交。 用O-2吸附的清洁MOO2板和板坯是金属导体,而重建具有高O原子覆盖的表面并成为半导体。 没有吸附的O或O-2的表面Mo原子是旋偏的。 氧气吸附显示了减少表面钼原子的旋转的能力。 O-2和O原子的吸附能量随着覆盖率的增加而降低。 定位O-2解离的过渡状态。 在五配位和四个协调的MO顶部位点上的O-2解离的能量屏障分别为0.227eV和0.281eV。

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