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Adsorption Properties of Nanocrystalline/Nanoporous Gallium Nitride Powders

机译:纳米晶/纳米孔氮化镓粉体的吸附性能

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A diverse pool of six semiconductor GaN nanopowders was synthesized by the thermally-driven pyrolysis of gallium imide at various temperatures. The XRD-derived average crystallite sizes for the nanopowders were in the range 1-17 nm. Standard nitrogen adsorption measurements at 77 K yielded the basic characteristics of the powder pore structures including the BET surface areas that spanned 23-287 m~2/g. Rare studies of adsorption of water vapor, carbon dioxide, and hydrogen on the nitride nanopowders were carried out. The data on water vapor adsorption at 295 K supported chemisorption of water molecules on the primary adsorption centers and physisorption on the secondary centers. The data on carbon dioxide adsorption at 273 K and hydrogen adsorption at 77 K were used to determine the selectivity of adsorption for these gases defined as the ratio of the respective Henry's constants calculated from the Langmuir equation. The GaN nanopowders showed remarkably diverse pore structure characteristics and adsorption properties that could be linked to the nitride's average crystallite size and crystallite agglomeration, the latter supported by helium density data.
机译:通过在不同温度下对亚胺镓进行热驱动热解合成了六种半导体GaN纳米粉体。纳米粉的XRD衍生的平均微晶尺寸在1-17 nm范围内。在77 K下进行标准氮吸附测量得出了粉末孔隙结构的基本特征,包括BET表面积在23-287 m〜2 / g之间。对氮化物纳米粉体上水蒸气,二氧化碳和氢的吸附进行了很少的研究。 295 K下水蒸气吸附的数据支持水分子在主要吸附中心的化学吸附和次要吸附中心的物理吸附。关于在273 K处的二氧化碳吸附和在77 K处的氢吸附的数据用于确定对这些气体的吸附选择性,定义为根据Langmuir方程计算的各个亨利常数的比值。 GaN纳米粉具有显着多样的孔结构特征和吸附特性,这些特征可能与氮化物的平均晶粒尺寸和晶粒凝聚有关,后者受到氦密度数据的支持。

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