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机译:通过用PFN界面层更换N型Si层来实现改进的氢化非晶硅薄膜太阳能电池
Korea Univ Coll Sci &
Technol Sch Display &
Semicond Phys Sejong Campus 2511 Sejong Ro Sejong City 339770 South Korea;
Ulsan Natl Inst Sci &
Technol Dept Energy Engn Ulsan 689798 South Korea;
Korea Univ Coll Sci &
Technol Sch Display &
Semicond Phys Sejong Campus 2511 Sejong Ro Sejong City 339770 South Korea;
Korea Inst Mat Sci Adv Funct Thin Films Dept Chang Won 641831 South Korea;
Korea Univ Coll Sci &
Technol Sch Display &
Semicond Phys Sejong Campus 2511 Sejong Ro Sejong City 339770 South Korea;
Korea Univ Coll Sci &
Technol Sch Display &
Semicond Phys Sejong Campus 2511 Sejong Ro Sejong City 339770 South Korea;
Korea Inst Mat Sci Adv Funct Thin Films Dept Chang Won 641831 South Korea;
Korea Inst Mat Sci Adv Funct Thin Films Dept Chang Won 641831 South Korea;
A-Si:H thin-film solar cells; n-type dopant-free solar cells; PFN interfacial dipole layer;
机译:通过用PFN界面层更换N型Si层来实现改进的氢化非晶硅薄膜太阳能电池
机译:使用原子层沉积沉积的氧化锌作为保护性界面层的高效氢化非晶硅薄膜太阳能电池
机译:用无毒的界面层更换n型层,以提高非晶Si薄膜太阳能电池的性能
机译:氢化非晶硅/微晶硅串联太阳能电池中的三功能n型微晶硅氧化物层
机译:通过在高温和低压下制造来改善氢化非晶硅太阳能电池的光诱导降解
机译:SiNx阻挡层对聚酰亚胺Ga2O3掺杂的ZnO p-i-n氢化非晶硅薄膜太阳能电池性能的影响
机译:具有p型和n型氢化氧化硅层的薄膜非晶硅锗太阳能电池
机译:富含缺陷外延对晶体硅/非晶硅异质结太阳能电池的影响及低迁移率层用于提高性能。