Optical, electrical and photoluminescence studies on Al2O3 doped PVA capped ZnO nanoparticles for optoelectronic device application

摘要

ZnO is a significant I I-V I n-type direct bandgap semiconductor material which has shown great attention because of its applications in light-transmitting diodes and photograph detectors. In the present investigation, Al2O3 doped ZnO nanoparticles were prepared by co-precipitation technique utilizing PVA as a host polymer. X-ray diffraction studies revealed the cubic structure of nanoparticles. The determined normal crystallite size of Al2O3 doped PVA capped ZnO nanoparticles was around 12 nm. SEM image showed that the nanoparticles were distributed uniformly with small sized grains consisting of nano dots like tips due to the agglomeration of particles. FTIR demonstrated the trademark vibrational modes of constituent components in the host matrix. The optical studies of all samples displayed close band edge retention at 351 nm (3.26 eV). From the DC studies the conductivity was found to be 3.24 x 10(-3) S/cm. EPR studies revealed the crystalline structure and coordination/neighbourhood site evenness of Al2O3 doped ZnO in the host lattice. Photoluminescence studies of Al2O3 doped PVA capped ZnO nanoparticles demonstrated two groups at 416 and 619 nm. The main band was seen in violet and other band in blue region. These studies revealed that the Al2O3 doped PVA capped ZnO nanoparticles materials can be used as LEDs, electroluminescence boards and plasma devices.