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Compact sub-nanosecond pulse seed source with diode laser driven by a high-speed circuit

机译:具有高速电路驱动二极管激光器的紧凑型亚纳秒脉冲种子源

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摘要

A compact sub-nanosecond pulse seed source with 1550 nm diode laser (DL) was obtained by employing a highspeed circuit. The circuit mainly consisted of a short pulse generator and a short pulse driver. The short pulse generator, making up of a complex programmable logic device (CPLD), a level translator, two programmable delay chips and an AND gate chip, output a triggering signal to control metal-oxide-semiconductor field-effect transistor (MOSFET) switch of the short pulse driver. The MOSFET switch with fast rising time and falling time both shorter than 1 ns drove the DL to emit short optical pulses. Performances of the pulse seed source were tested. The results showed that continuously adjustable repetition frequency ranging from 500 kHz to 100 MHz and pulse duration in the range of 538 ps to 10 ns were obtained, respectively. 537 mu W output was obtained at the highest repetition frequency of 100 MHz with the shortest pulse duration of 538 ps. These seed pulses were injected into an fiber amplifier, and no optical pulse distortions were found.
机译:通过采用高速电路获得具有1550nm二极管激光器(DL)的紧凑型亚纳秒脉冲种子源。电路主要由短脉冲发生器和短脉冲驱动器组成。短脉冲发生器,构成复杂的可编程逻辑器件(CPLD),电平翻译器,两个可编程延迟芯片和AN和栅极芯片,输出触发信号以控制金属氧化物半导体场效应晶体管(MOSFET)开关短脉冲驱动器。 MOSFET开关具有快速上升时间和下降时间短于1ns的时间,使DL发出短光脉冲。测试了脉冲种子源的性能。结果表明,分别从500kHz至100MHz的连续可调节重复频率和538gE至10ns的范围内的脉冲持续时间。在最高重复频率为100MHz的最高重复频率下获得537μW输出,最短脉冲持续时间为538 ps。将这些种子脉冲注入光纤放大器,并且没有找到光学脉冲失真。

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