Barrier thickness dependence of MgxZn1-xO/ZnO quantum well (QW) on the performance of a p-NiO/QW/n-ZnO photodiode

摘要

An MgxZn1-xO/ZnO quantum well (QW) structure, with various barrier (MgxZn1-xO layer) thicknesses, was inserted into p-NiO/n-ZnO heterojunction photodiodes (HPDs) by using a radio-frequency magnetron sputtering system. The effect of various barrier thicknesses on the performance of QW-PDs was investigated. A band diagram shows that the QW-PD with 10 nm barrier layer presents a tunneling carrier transport mechanism, the UV- and visible-generated carriers tunnel through the thin barrier layer. Whereas the QW-PDs with thicker (>= 25 nm) barrier layers show recombination-tunneling carrier transport. The visible-generated carriers are effectively confined within the well layer in the QW structure, causing the visible-response to be greatly reduced by more than 3 orders compared to that in the QW-PD with a 10 nm barrier layer. However, on further increasing the barrier thickness beyond 25 nm, the visible-response will no longer be reduced. In contrast, with decreasing the barrier thickness from 60 to 25 nm, the UV-response increases due to the overlap increase of the fundamental electron and hole wave function in the quantum well. Such a result drastically enhances the rejection ratio (320 nm/500 nm) from 264 for QW-PDs with a 10 nm barrier to 2986 for QW-PDs with a 25 nm barrier layer by a 11.3 ratio.