机译:形态控制& 111& -3C-SIC薄膜通过LCVD的HMDS流速
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &
Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &
Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &
Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &
Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
Wuhan Univ Technol Hubei Key Lab Adv Technol Automot Components Wuhan 430070 Peoples R China;
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &
Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &
Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &
Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
Inst Phys &
Chem Res 2-1 Hirosawa Wako Saitama 3510198 Japan;
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &
Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &
Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &
Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &
Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
机译:形态控制& 111& -3C-SIC薄膜通过LCVD的HMDS流速
机译:在各种衬底温度下在轴上和轴外3C-SiC(111)/ Si(111)衬底上溅射AlN膜
机译:通过在3C-SiC / Si(111)衬底上通过脉冲偏置增强形核和外延晶粒选择合成的高取向金刚石(111)膜
机译:在(111),(211)和(100)硅衬底上生长的3C-SiC膜的结构和形态表征
机译:电子应用硅上外延3C-SiC薄膜的生长和表征。
机译:在3C-SiC(111)/ Si(111)基板上进行ZnO(002)薄膜的RF溅射退火后处理和表征
机译:LCVD中HMDS流速的<111> -3C-SiC膜的形态控制
机译:通过脉冲激光烧蚀在无定形siO(sub 2)衬底上生长的(111)晶体CeO(sub 2)薄膜的形态和微观结构