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Interface metallization enabled an ultra-stable Fe2O3 hierarchical anode for pseudocapacitors

机译:界面金属化使PSeudoCapacitor的超稳定Fe2O3分层阳极使能

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摘要

Despite significant advances in cathode materials, developing high-performance anodes remains a key challenge for future pseudocapacitors. Fe2O3 has been considered as a promising anode candidate due to its high theoretical capacitance, environmental benignity, and earth-abundant characteristics. However, the low electronic conductivity and poor cyclability of Fe2O3 significantly limit its practical application. In this work, a 3D nickel-metalized carbon nanofiber network was developed to deposit an Fe2O3 nanosheet anode. The nickel layer not only improved the electronic conductivity and the wettability of the 3D carbon substrate but also benefit the stability of the Fe2O3/carbon interfaces and the stress-release upon cycling. As a result, the newly designed Fe2O3 anode composite exhibited a high areal capacitance of 1.80 F cm(-2) at a high mass loading of 4.2 mg cm(-1) and ultra-high capacitance retention of 85.1% after successive 100 000 cycles, outperformed most of the reported Fe2O3-based anode materials. Extended the interface metallization method to a MnO2 cathode, excellent capacitance retention of 108.2% was reached after 26 000 cycles, suggesting a potentially broad application of such an interface-management method in elevating the stability of metal oxide materials in various pseudocapacitive energy storage devices.
机译:尽管阴极材料具有显着进展,但开发的高性能阳极仍然是未来伪偶像师的关键挑战。由于其高理论电容,环境良性和土坯特征,Fe2O3被认为是有前途的阳极候选者。然而,低电子导电性和Fe2O3的可差的可行性显着限制了其实际应用。在这项工作中,开发了一种3D镍金属化碳纳米恐怖网络以沉积Fe2O3纳米片阳极。镍层不仅改善了3D碳基材的电子电导率和润湿性,而且还有利于Fe2O3 /碳界面的稳定性以及循环时的应力释放。结果,新设计的Fe2O3阳极复合材料在连续100 000次循环之后的高批量负荷下,在4.2mg cm(-1)的高度负荷下,在4.2mg cm(-1)的高度负荷下,在高批量负载下,高度高电容保持的高度电容为85.1% ,大多数报告的基于Fe2O3的阳极材料表现优于大多数。将界面金属化方法扩展到MNO2阴极,在26 000个循环后达到108.2%的优异电容保持,表明这种界面管理方法潜在地应用了这种界面管理方法,在升高了各种假偶联能量存储装置中的金属氧化物材料的稳定性。

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  • 来源
    《RSC Advances》 |2020年第15期|共9页
  • 作者单位

    Tsinghua Univ Div Energy &

    Environm Tsinghua Shenzhen Int Grad Sch Shenzhen 518055 Peoples R China;

    Tsinghua Univ Div Energy &

    Environm Tsinghua Shenzhen Int Grad Sch Shenzhen 518055 Peoples R China;

    Tsinghua Univ Div Energy &

    Environm Tsinghua Shenzhen Int Grad Sch Shenzhen 518055 Peoples R China;

    Univ Elect Sci &

    Technol China Sch Optoelect Informat State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Peoples R China;

    Tsinghua Univ Div Energy &

    Environm Tsinghua Shenzhen Int Grad Sch Shenzhen 518055 Peoples R China;

    Tsinghua Univ Div Energy &

    Environm Tsinghua Shenzhen Int Grad Sch Shenzhen 518055 Peoples R China;

    Tsinghua Univ Div Energy &

    Environm Tsinghua Shenzhen Int Grad Sch Shenzhen 518055 Peoples R China;

    Tsinghua Univ Sch Mat Sci &

    Engn Beijing 100084 Peoples R China;

    Tsinghua Univ Div Energy &

    Environm Tsinghua Shenzhen Int Grad Sch Shenzhen 518055 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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