机译:INXGA(1-X)P纳米线中N型掺杂的电气和光学评估
Lund Univ NanoLund Solid State Phys POB 118 Lund Sweden;
Univ Fed Rio de Janeiro Inst Fis Caixa Postal 68528 BR-21941972 Rio De Janeiro Brazil;
Lund Univ NanoLund Solid State Phys POB 118 Lund Sweden;
Lund Univ NanoLund Solid State Phys POB 118 Lund Sweden;
Lund Univ NanoLund Solid State Phys POB 118 Lund Sweden;
Lund Univ NanoLund Solid State Phys POB 118 Lund Sweden;
Lund Univ NanoLund Solid State Phys POB 118 Lund Sweden;
nanowire; InGaP; doping; evaluation;
机译:INXGA(1-X)P纳米线中N型掺杂的电气和光学评估
机译:通过Ga掺杂及其纳米光电应用来调节n型CdS纳米线的电传输性质
机译:未掺杂和n型掺杂的InN纳米线的电输运特性
机译:Ba_(1-x)Sr_xtiO_3膜对微结构,光学和电性能的摩尔浓度的SR掺杂物的影响
机译:化合物和过渡金属掺杂的化合物半导体纳米线的光学和电学性质。
机译:硫化锡掺杂In2O3纳米线的电结构和光学性质
机译:掺杂浓度对由化学浴沉积法生长的内在N型ZnO(I-ZnO)和(Cu,Na和K)掺杂P型ZnO薄膜的光学和电性能的影响
机译:简并掺杂的N型In(sub x)Ga(sub 1(minus)x)as的电学和光学性质