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Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

机译:具有精确控制厚度的铁电薄膜的减法制造

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The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.
机译:控制薄膜增长的能力导致了我们对基本物理学的理解以及新颖技术的出现前进。然而,常见的薄膜生长技术引入了与薄膜接口和表面上的缺陷浓度相关的局限性,其限制了可以通过实验生产和研究的系统范围的表面。这里,我们开发了一种基于离子束的减法制造工艺,其能够产生具有预定厚度的薄膜的产生和修改。为了实现这一点,我们改变了一种多模式成像平台,将飞行时间二级离子质谱法与原子力显微镜相结合到一个独特的制造工具,该工具允许精确地溅射纳米薄层材料。为了证明具有原位反馈的薄膜的制造和对膜厚度和功能的控制,我们系统地研究了锆型钛酸盐在单个外延膜内的铁电切换的厚度依赖性。我们的结果表明,通过减法薄膜制造过程,我们可以控制压电响应作为膜厚度的函数以及改善整体压电响应与未处理的薄膜的函数。

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