Rapid wafer-scale fabrication with layer-by-layer thickness control of atomically thin MoS2 films using gas-phase chemical vapor deposition

摘要

Design and development of the growth-process for the production of wafer-scale spatially homogeneous thickness controlled atomically thin transition metal dichalcogenides (TMDs) is one of the key challenges to realize modern electronic devices. Here, we demonstrate rapid and scalable synthesis of MoSsub2/sub films with precise thickness control via gas-phase chemical vapor deposition approach. We show that a monolayer MoSsub2/sub can be synthesized over a 2-in. sapphire wafer in a growth time as low as 4 min. With a linear growth rate of 1-layer per 4 min, MoSsub2/sub films with thicknesses varying from 1- to 5-layers with monolayer precision are produced. We propose that, in addition to Raman spectroscopy, the energy splitting of exciton bands in optical-absorbance spectra may be another choice for layer thickness identification. With suitable precursor selection, our approach can facilitate the rapid synthesis of spatially homogeneous atomically thin TMDs on a large scale.