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机译:硫钝化对单个GaAs纳米线光电探测器暗电流的影响和机理分析
Changchun Univ Sci &
Technol State Key Lab High Power Semicond Lasers Changchun 130022 Jilin Peoples R China;
Changchun Univ Sci &
Technol State Key Lab High Power Semicond Lasers Changchun 130022 Jilin Peoples R China;
Wuhan Univ Dept Phys Minist Educ Wuhan 430072 Hubei Peoples R China;
Wuhan Univ Dept Phys Minist Educ Wuhan 430072 Hubei Peoples R China;
Changchun Univ Sci &
Technol State Key Lab High Power Semicond Lasers Changchun 130022 Jilin Peoples R China;
Changchun Univ Sci &
Technol State Key Lab High Power Semicond Lasers Changchun 130022 Jilin Peoples R China;
Changchun Univ Sci &
Technol State Key Lab High Power Semicond Lasers Changchun 130022 Jilin Peoples R China;
Changchun Univ Sci &
Technol State Key Lab High Power Semicond Lasers Changchun 130022 Jilin Peoples R China;
Changchun Univ Sci &
Technol State Key Lab High Power Semicond Lasers Changchun 130022 Jilin Peoples R China;
Wuhan Univ Dept Phys Minist Educ Wuhan 430072 Hubei Peoples R China;
nanowires; photodetector; passivation; dark current; surface states;
机译:硫钝化对单个GaAs纳米线光电探测器暗电流的影响和机理分析
机译:拟议的机制来代表四级合金封顶的InAs / GaAs量子点红外光电探测器中低能光离子(H〜-)注入通过四阶抑制暗电流密度
机译:缓冲层和工艺对2.5μm波长2/100失配InGaAs光电探测器暗电流的影响
机译:硫钝化和介电上限对InGaAs / InP PIN光电探测器暗电流的影响
机译:光电探测器图案Gaassb(N)纳米线的设计与表征
机译:用于室温高性能近红外光电探测器的单晶InGaAs纳米线
机译:具有改进的检测能力的量子阱9 µm GaAs / AlGaAs红外光电探测器中的最佳暗电流降低