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Carbon nanotube conditioning part 1-effect of interwall interaction on the electronic band gap of double-walled carbon nanotubes

机译:碳纳米管调理部分1-交错相互作用对双壁碳纳米管电子带隙的影响

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Ab initio density functional theory simulations were used to calculate the electronic structure and the total energy of double-walled carbon nanotubes (DWCNTs). The relaxed configurations studied were uncapped, infinitely-long zigzag@zigzag double-walled carbon nanotubes. The lowest energy configuration was found to correspond to an interwall distance of 0.35 nm, except for the configurations with inner tube chiral indices (5,0), (6,0) and (7,0). The largest binding energies were found to correspond to a 0.35 nm interwall distance for all the DWCNT configurations studied, and increasing with DWCNT average diameter. In terms of the effect of the interwall interaction on the electronic band gap of DWCNTs, four regions of band gap were obtained which were termed: zero band gap, narrow band gap, small band gap, and medium band gap regions. These regions offer the possibility to first tune the electronic band gap to a region with a desired range, and further tune that choice within the region itself by varying the interwall distance. It was also found that zigzag@zigzag DWCNTs with outer tube leading chiral index n = 3k + 1 or n = 3k + 2 (k being an integer) follow, as a general trend, an inversely proportional relation of the electronic band gap with respect to the average diameter.
机译:AB Initio密度泛函理论模拟用于计算电子结构和双壁碳纳米管(DWCNT)的总能量。研究的轻松配置是未处成的,无限长的Zigzag @ Zigzag双壁碳纳米管。发现最低能量配置对应于0.35nm的交错距离,除了具有内管手术指数(5,0),(6,0)和(7,0)的配置。发现最大的粘合能量对应于所研究的所有DWCNT配置的0.35nm交错距离,并随着DWCNT平均直径增加。就通道交互对DWCNT的电子带隙的影响而言,获得了四个带隙区域,其被称为:零带隙,窄带隙,小带隙和中频隙区域。这些区域提供了首先将电子频带隙与所需范围的区域进行首先将电子频带隙调整到区域,并且通过改变交错距离来进一步调谐区域自身的选择。还发现,具有外管前导手性指数n = 3k + 1或n = 3k + 2(k为整数)的Zigzag Zigzag Dwcnts遵循,作为一般趋势,相对于电子带隙的反向比例关系平均直径。

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