Improved optical imaging of high aspect ratio nanostructures using dark-field microscopy

摘要

Improvements to white light optical imaging of widely spaced, high aspect ratio nanostructures are demonstrated using dark-field field microscopy. 1D models of bright- and dark-field imaging are developed from rigorous modal diffraction theory by assuming that features are periodic. A simple model is developed to explain dark field results and simulated line images obtained using the two modalities are compared for different dimensions and materials. Increased contrast between etched features and the substrate is demonstrated in dark field, due to its reduced sensitivity to scattering from flat areas. The results are verified using silicon nanostructures fabricated by sidewall transfer lithography, and feature separation with improved tolerance to apparent substrate brightness is demonstrated during image segmentation using the Otsu method.