机译:短通道单层MOS2现场效应晶体管由SiOx Nanofins定义为20nm
Hunan Univ State Key Lab Adv Design &
Mfg Vehicle Body Sch Phys &
Elect Changsha 410082 Hunan Peoples R China;
Hunan Univ Coll Mech &
Vehicle Engn Changsha 410082 Hunan Peoples R China;
Hunan Univ Coll Mech &
Vehicle Engn Changsha 410082 Hunan Peoples R China;
Natl Univ Def Technol Coll Adv Interdisciplinary Studies Changsha 410073 Hunan Peoples R China;
Hunan Univ Coll Mech &
Vehicle Engn Changsha 410082 Hunan Peoples R China;
Hunan Univ State Key Lab Adv Design &
Mfg Vehicle Body Sch Phys &
Elect Changsha 410082 Hunan Peoples R China;
Hunan Univ Coll Chem &
Chem Engn State Key Lab Chemo Biosensing &
Chemometr ICBN Changsha 410082 Hunan Peoples R China;
Hunan Univ State Key Lab Adv Design &
Mfg Vehicle Body Sch Phys &
Elect Changsha 410082 Hunan Peoples R China;
Hunan Univ Coll Chem &
Chem Engn State Key Lab Chemo Biosensing &
Chemometr ICBN Changsha 410082 Hunan Peoples R China;
Hunan Univ State Key Lab Adv Design &
Mfg Vehicle Body Sch Phys &
Elect Changsha 410082 Hunan Peoples R China;
Natl Univ Def Technol Coll Adv Interdisciplinary Studies Changsha 410073 Hunan Peoples R China;
Hunan Univ Coll Mech &
Vehicle Engn Changsha 410082 Hunan Peoples R China;
short channel devices; hydrogen silsesquioxane (HSQ) electron resists; large area preparation;
机译:短通道单层MOS2现场效应晶体管由SiOx Nanofins定义为20nm
机译:短沟道单层过渡金属双硫族化物场效应晶体管的紧凑亚阈值模型
机译:单层基于MoS_2的无结和反转模式场效应晶体管中的短沟道效应比较
机译:双栅极单层MoS2沟道场效应晶体管的静电学建模
机译:基于N沟道InGaAsP-InP的倒置通道技术器件(ICT)的设计,制造和表征,用于光电集成电路(OEIC):双异质结光电开关(DOES),异质结场效应晶体管(HFET),双极倒置沟道场-效应晶体管(BICFET)和双极型反向沟道光电晶体管(BICPT)。
机译:局部氦离子辐射对合成单层MOS2场效应晶体管性能的影响
机译:单层基于MoS2的无结和反转模式场效应晶体管中的短沟道效应比较