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Ab initio investigation of the electronic properties of graphene on InAs(111)A

机译:从头开始研究InAs(111)A上石墨烯的电子性质

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摘要

The equilibrium geometry and electronic structure of graphene on the most stable In-vacancy InAs(111)A surface has been investigated using the density functional and pseudopotential theories. The equilibrium distance between graphene and InAs(111) is found to be 3.05 with adsorption energy approximately 38meV/C atom. According to our electronic band calculation, there is a re-distribution of the charge density around the graphene sheet, which leads to the development of a dipole moment along the surface normal. Scanning tunnelling microscopy image simulations suggest that the InAs(111) substrate is visible through the graphene layer.
机译:使用密度泛函和伪势能理论研究了最稳定的In-Invac(InAs(111)A)表面上石墨烯的平衡几何结构和电子结构。发现石墨烯与InAs(111)之间的平衡距离为3.05,吸附能约为38meV / C原子。根据我们的电子能带计算,石墨烯片周围的电荷密度会重新分布,这会导致沿表面法线的偶极矩的发展。扫描隧道显微镜图像模拟表明,通过石墨烯层可以看到InAs(111)衬底。

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