In-situ Raman spectroscopy used to study and control the initial growth phase of microcrystalline absorber layers for thin-film silicon solar cells

摘要

The continuous deposition of microcrystalline silicon has been monitored with in-situ Raman spectroscopy. The process and measurement settings were chosen such that one spectrum was taken during approximately 9 nm of layer growth. This allows observing the crystallinity in the initial growth phase of microcrystalline silicon absorber layers. The influence of different p-doped seed layers has been studied. Under constant deposition conditions, an initial decrease in crystallinity was observed over the first tens of nanometers. By profiling the process gas flows during the initial phase it was possible to reduce the amount of amorphous material that was detected during the initial phase of deposition.