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Optical constants and band gap expansion of size controlled silicon nanocrystals embedded in SiO2 matrix

机译:SiO2基体中尺寸受控的硅纳米晶体的光学常数和带隙扩展

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Silicon nanocrystals (Si-NCs) with different sizes embedded in SiO _2 matrix were synthesized by phase separation and thermal crystallization of SiO_x/SiO_2 supperlattice approach. The optical constants and band gap expansion of Si-NCs have been investigated by spectroscopic ellipsometry, based on the Maxwell-Garnett effective medium approximation and the Forouhi-Bloomer optical dispersion model. Similar spectra shapes but smaller values of Si-NCs optical constants with respect to bulk crystalline Si is observed. With the size of Si-NCs decreasing from 6 nm to 2 nm, the band gap increases from 1.64 eV to 2.56 eV. The band gap expansion, as compared to bulk crystalline Si, which agrees with the prediction of first-principles calculations based on quantum confinement effect, is presented in this paper.
机译:通过相分离和热晶化SiO_x / SiO_2超晶格方法,合成了尺寸不同的硅纳米晶(Si-NCs)。基于Maxwell-Garnett有效介质近似和Forouhi-Bloomer光学色散模型,通过椭圆偏振光谱法研究了Si-NCs的光学常数和带隙扩展。观察到相似的光谱形状,但是相对于体晶Si,Si-NCs光学常数的值较小。随着Si-NC尺寸从6 nm减小到2 nm,带隙从1.64 eV增加到2.56 eV。本文提出了与体晶硅相比的带隙扩展,其与基于量子约束效应的第一性原理计算的预测相符。

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