Progress In non-volatile memory devices based on nanostructured materials and nanofabrication

摘要

Semiconductor device technology has continuously advanced through active research and the development of innovative technologies during the past decades. Semiconductor devices are expected to descend below the 10 nm scale within the next 10 years. Meanwhile, nanofabrication technology and the synthesis of nanostructured materials for novel device applications have made considerable progress too. This review will discuss new technologies that make this continuous device scaling possible. Then, recent efforts and research activities will be discussed regarding the fabrication and characterization of non-volatile memory devices made of nanostructured materials and by nanofabrication. This review concludes with an analysis of device fabrication strategies and device architectures beyond the device scaling limit with an emphasis on some promising technologies from bottom-up approaches.