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Study on the temperature dependence of the OH~- absorption band in Hf-doped LiNbO_3 crystals

机译:f掺杂LiNbO_3晶体中OH〜-吸收带的温度依赖性研究

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摘要

We study in this paper the temperature dependence of the OH~- absorption band in LiNbO_3 crystals with different Hf-doping concentrations. It is found that the shoulder at 3500 cm-1 appears in the doping level of 2.6 mol%, becomes more evident at 3 and 4 mol%, and then gradually faints when the doping concentration increases. This result is explained by the non-monotonic change of Nb vacancy density in the three stages of the defect evolution involved in the Hf incorporation of LN lattice. Moreover, the absorption difference analysis of the OH~- bands is consistent with this explanation and reveals that the mobility of H~+ ions may be reduced by the strong trapping of the highly electronegative Nb vacancies.
机译:本文研究了不同掺杂Hf的LiNbO_3晶体中OH〜-吸收带的温度依赖性。发现在3500cm-1处的肩部以2.6mol%的掺杂水平出现,在3mol%和4mol%时变得更明显,然后当掺杂浓度增加时逐渐变暗。该结果可以通过与LN晶格的Hf掺入有关的缺陷演变的三个阶段中Nb空位密度的非单调变化来解释。此外,对OH〜-谱带的吸收差分析与该解释一致,并揭示了H〜+离子的迁移率可能会由于强负电Nb空位的强捕获而降低。

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