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A facile hydrothermal synthesis and memristive switching performance of rutile TiO2 nanowire arrays

机译:金红石型TiO2纳米线阵列的简便水热合成和忆阻转换性能

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摘要

A facile one-step hydrothermal method has been reported to prepare the single crystalline rutile TiO2 nanowire arrays with (101) preferred orientation on the FTO substrate at a low temperature of 120 degrees C for 4 h. The as-prepared Au/TiO2 NWAs/FTO based device indicates a nonvolatile bipolar memristive switching behavior. The current ratio between low-resistance state and high-resistance state exceeds two orders of magnitude at -0.5 V. The memristive switching behaviors of the device have been elucidated by the Ohmic conduction mechanism and the trap-controlled space charge limited current conduction mechanism. Furthermore, the Schottky barriers modulated by the oxygen vacancies at the Au/TiO2 interface have been suggested to dominate the bias voltages-controlled bipolar memristive switching behaviors of the device. This work indicates that the Au/TiO2 NWAs/FTO based device may be a promising candidate for the memristor applications. (C 2016 Elsevier B.V. All rights reserved.
机译:据报道,一种简便的一步水热法可在120°C的低温下在FTO衬底上制备具有(101)较好取向的单晶金红石型TiO2纳米线阵列,时间为4 h。所制备的基于Au / TiO2 NWAs / FTO的设备表明存在非易失性双极忆阻开关行为。低电阻状态和高电阻状态之间的电流比在-0.5 V时超过两个数量级。通过欧姆传导机制和陷阱控制的空间电荷限制电流传导机制,阐明了器件的忆阻开关行为。此外,已经提出了由Au / TiO 2界面上的氧空位调制的肖特基势垒支配器件的偏置电压控制的双极忆阻开关行为。这项工作表明基于Au / TiO2 NWAs / FTO的器件可能是忆阻器应用的有希望的候选者。 (C 2016 Elsevier B.V.保留所有权利。

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