首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Structural, surface morphological and UV photodetection properties of pulsed laser deposited Mg-doped ZnO nanorods: Effect of growth time
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Structural, surface morphological and UV photodetection properties of pulsed laser deposited Mg-doped ZnO nanorods: Effect of growth time

机译:脉冲激光沉积掺Mg的ZnO纳米棒的结构,表面形态和紫外光电探测特性:生长时间的影响

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摘要

Mg0.05Zn0.95O (MZO) nanorod (NR) array films have been successfully grown on SiO2-Si substrates by pulsed laser deposition (PLD) without any seed layer. The effect of growth time (15-60 min) on the structural, surface morphological and UV sensing properties of the aligned MZO NRs were studied. All the samples exhibit the hexagonal wurtzite phase with a preferential c-axis orientation that improves on increasing growth time. FESEM images demonstrated that the MZO NRs grow with better alignment and greater size for elongated growth durations. The UV photodetection characteristics of MZO NRs were investigated in metal-semiconductor-metal (MSM) planar configurations at room temperature and are found to be greatly dependent on growth time. The photocurrent increases with an increase in the growth time due to improvement in film crystallinity and mean surface area of nanorods. Both the photocurrent and responsivity were further measured with the variation of optical power density and applied voltage, respectively. Exceedingly stable and fast switching UV photoresponse is seen for the photodetector having MZO NRs arrays grown for 60 min, which shows highest responsivity of 22.33 mA/W upon 2 mW/cm(2) UV illumination (365 nm) at 5 V applied bias. (C) 2015 Elsevier B.V. All rights reserved.
机译:Mg0.05Zn0.95O(MZO)纳米棒(NR)阵列膜已通过没有任何种子层的脉冲激光沉积(PLD)成功地生长在SiO2 / n-Si衬底上。研究了生长时间(15-60分钟)对对齐的MZO NRs的结构,表面形态和UV感测特性的影响。所有样品均显示具有优先c轴取向的六方纤锌矿相,随着生长时间的延长而改善。 FESEM图像表明,MZO NRs具有更好的排列性和更大的尺寸,可以延长生长时间。在室温下,在金属-半导体-金属(MSM)平面配置中研究了MZO NRs的紫外光电检测特性,发现其很大程度上取决于生长时间。由于膜结晶度和纳米棒平均表面积的改善,光电流随着生长时间的增加而增加。分别通过光功率密度和施加电压的变化来进一步测量光电流和响应度。对于具有生长60分钟的MZO NRs阵列的光电探测器,可以看到极其稳定和快速的切换UV光响应,在2 mW / cm(2)的UV照射(365 nm)施加5 V偏压时,其显示出最高的响应度22.33 mA / W。 (C)2015 Elsevier B.V.保留所有权利。

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