Synthesis and optical properties of Ce-doped GaN single-crystalline nanowires

摘要

Ce-doped GaN single-crystalline nanowires were synthesized by a two-step approach that involved a chemical vapor deposition (CVD) growth of pure GaN nanowires and a post-sintering treatment for the incorporation of Ce ions. The structural, morphological and compositional characterizations revealed that Ce ions have been uniformly introduced into the lattice of wurtzite-structured GaN nanowires without the degeneration of morphology and crystallinity. PL spectra of the samples show the near-band-gap emissions with obviously shifts that depend on the post-sintering durations. (C) 2015 Elsevier B.V. All rights reserved.