Temperature and tellurium (Te) dependence of electrical characterization and surface properties for a chalcopyrite structured schottky barrier diode

摘要

Al/p-CuIn_(0.7)Ga_(0.3)(Se_(1-x)Te_x)_2/Mo Schottky barrier diodes (SBD) have been investigated as electrical and morphological. Electrical characterization and surface maps of the prepared CuIn_(0.7)Ga_(0.3)(Se_(1-x)Te_x)_2 (briefly, CIGSeTe) compounds with two different compositions for x = 0.0 and 0.6 were examined in 150-300 K range. CIGSeTe films were grown on Mo back contact. Some electrical parameters such as, ide ality factors, n; zero-bias barrier heights, ф_(bo) and Richardson constants were calculated from the current-voltage (I-V) measurements and plotted as a function of temperature. These results verify that electrical properties of these two diodes can be defined on the basis of the Thermionic emission (TE) theory with the Gaussian distribution (GD) of the Schottky barrier height (SBH) being related to inhomogeneities at the metal/semiconductor (MS) interface. On the other hand, we saw a better morphology in Te rich sam ples. Rms (root mean square) values increased from 8.50 nm to 9.80 nm with higher pellets on surface with Te.