A promising sputtering for in situ fabrication of CIGS thin films without post-selenization

摘要

A promising route based on in situ radio frequency sputtering a quaternary CIGS target without post-selenization treatment can be achieved. The deposited CIGS films shows clear CIGS chalcopyrite structure, highly (112) oriented and dense polycrystalline grains. The proposed Cu precursor film, an induced layer, can be better for CIGS formation with controllable composition. Devices built with these films exhibit efficiencies of 1.25%. Higher efficient can be expected for CIGS solar cells by further improving this low-cost, simple and large-scale technique.