Microstructure and electrical properties of XInZnO (X = Ti, Zr, Hf) films and device performance of their thin film transistors-The effects of employing Group IV-B elements in place of Ga

摘要

In this study, we systematically investigated the effects of employing Group IV-B metals (Ti, Zr, and Hf) in place of Ga in GaInZnO films by fabricating XInZnO films (X = Ti, Zr, or Hf) with a various ratio of the Group IV-B elements. Materials characterization using various analytical methods (including transmission electron microscopy and X-ray photoelectron spectroscopy) elucidates that upon the addition of a small amount of the alloying elements, while the microstructure turned into amorphous from nanocrys-talline, the oxygen vacancy concentration decreased systematically along with the carrier concentration. The device characteristics (threshold voltage and field-effect mobility) of the transistors fabricated from the films sensitively reflect the changes in the film properties (carrier concentration and bulk mobility). The bias stability enhanced with the increase of the ratio of the alloying elements to an extent that apparently increases in the order of Ti, Zr and Hf, which is reverse to the order of the electronegativity.