Effects of Buffer Layers on Electrical Properties of Pb (Zr, Ti) O_3 Thin films Derived by Metalorganic Decomosition

摘要

Pb (Zr, Ti) O_3 (PZT) thin films were prepared on three different buffer layers by a metalorganic decomposition method. The effects of buffer layers on the structural and electrical properties of PZT thin films were studied. PbTiO_3 buffer layer cn effectively improve the crystallinity of PZt Thin films. Correspondingly, the dielectric and ferroelectric properties of PZT films on PbTiO_3 Buffer layers were better than those of the films on TiO_2 Or ZrO_2 buffer layers, whereas ZrO_2 buffer Layers worsened crystallization of PZT films due to difficulty of the combining nucleation of ZrO_2 And PbO.