首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Investigation of initial epitaxial growth of (Ba, Sr)TiO_3 thin film on (001) SrTiO_3 substrate using first-principles calculations
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Investigation of initial epitaxial growth of (Ba, Sr)TiO_3 thin film on (001) SrTiO_3 substrate using first-principles calculations

机译:利用第一性原理研究(Ba,Sr)TiO_3薄膜在(001)SrTiO_3衬底上的初始外延生长

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摘要

Initial epitaxial growth of (Ba, Sr)TiO_3 (BST) thin film on (001) SrTiO_3 (STO) substrate is investigated by first-principles calculations. Binding energy, density of state and bond populations are calculated for(AO) (A = Ba or Sr), (TiO) and (ATiO_3) unit-cell layers deposition on (001) STO substrate based on layer-by-layer growth mode including SrO-terminated and TiO_2-terminated surfaces. Three possible interfaces including Normal stacking interface, Ruddlesden-Popper-type interface and Magneli-type interface are considered. It is found that BST thin film can epitaxially grow on (001) STO substrate with a two-layers growth mode. This work is crucial in theoretical understanding the epitaxial growth mechanism and preparing epitaxial thin films for perovskite ferroelectrics.
机译:通过第一性原理计算,研究了(Ba,Sr)TiO_3(BST)薄膜在(001)SrTiO_3(STO)衬底上的初始外延生长。基于逐层生长模式,计算(AO)(A = Ba或Sr),(TiO)和(ATiO_3)晶胞在(001)STO衬底上沉积的结合能,状态密度和键总数包括SrO端接和TiO_2端接的表面。考虑了三种可能的接口,包括普通堆叠接口,Ruddlesden-Popper型接口和Magneli型接口。发现BST薄膜可以在两层生长模式下在(001)STO衬底上外延生长。这项工作对于理论理解外延生长机理和制备钙钛矿铁电体的外延薄膜至关重要。

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