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Influence of solution pH in electrodeposited iron diselenide thin films

机译:溶液pH值对电沉积二硒化铁薄膜的影响

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摘要

Thin films of iron diselenide (FeSe_2) have been prepared on indium doped tin oxide coated conducting glass (ITO) substrates from an aqueous electrolytic bath containing FeSO_4 and SeO_2. Growth mechanism has been analyzed using cyclic voltammetry. The potential region in which the formation of FeSe_2 occurs is found to be -450 mV versus SCE. X-ray diffraction analysis showed that the deposited films are found to exhibit orthorhombic structure with preferential orientation along (12 0) plane. X-ray line profile analysis has been carried out to determine the microstructural parameters such as crystallite size, rms microstrain, dislocation density and stacking fault probability. Surface morphology and film composition have been analyzed using scanning electron microscopy, atomic force microscopy and energy dispersive analysis by X-rays, respectively. Optical parameters such as band gap, refractive index, extinction coefficient, real and imaginary dielectric constants, dielectric susceptibility and optical conductivity have been determined from optical absorption measurements. The observed results are discussed in detail.
机译:从包含FeSO_4和SeO_2的电解水槽中,在掺有铟的氧化锡涂覆的导电玻璃(ITO)基板上制备了二硒化铁(FeSe_2)薄膜。已经使用循环伏安法分析了生长机理。发现相对于SCE,发生FeSe_2形成的潜在区域为-450mV。 X射线衍射分析表明,发现沉积的膜表现出正交晶结构,并沿(12 0)面具有优先取向。已经进行了X射线线轮廓分析,以确定微结构参数,例如微晶尺寸,均方根微应变,位错密度和堆垛层错概率。使用扫描电子显微镜,原子力显微镜和X射线能量色散分析分别分析了表面形态和膜组成。光学参数,例如带隙,折射率,消光系数,实和虚介电常数,介电常数和光导率已从光吸收测量值中确定。观察结果将详细讨论。

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