首页> 外国专利> THIN FILM CADMIUM SELENIDE ELECTRODEPOSITED FROM SELENOSULPHITE SOLUTION

THIN FILM CADMIUM SELENIDE ELECTRODEPOSITED FROM SELENOSULPHITE SOLUTION

机译:从亚硫酸盐溶液中电解沉积的薄膜硒化镉

摘要

ABSTRACT OF THE DISCLOSUREA process for electrodepositing a thin layer ofcadmium selenide on a suitable substrate is disclosed.The substrate is immersed in an electrolyte bath with pHranging from 5 to 10 and having an aqueous solution ofselenosulphite ions and cadmium ions complexed withnitrilotriacetic acid. The pH range shifts the chemicalequilibrium of complexing the cadmium ions towardsassociated complexed cadmium ions. A voltage is appliedto the cathode and anode in the electrolyte to reducethe selenosulphite ions to produce selenide ions at thecathode of a sufficient concentration which reacts withthe complexed cadmium ions to electrodeposit therebycadmium selenide on the cathode. The thin layer ofcadmium selenide is particularly useful in in aphotoelectrochemical cell.
机译:披露摘要电沉积薄层公开了在合适的基底上的硒化镉。将基板浸入pH值的电解液中范围从5到10,水溶液为硒亚硫酸根离子和镉离子络合次氮基三乙酸。 pH范围会改变化学物质络合镉离子的平衡相关的络合镉离子。施加电压使阴极和阳极中的电解液还原亚硒酸根离子在足够浓度的阴极与络合的镉离子由此电沉积硒化镉在阴极上。薄层硒化镉在光电化学电池。

著录项

  • 公开/公告号CA1242408A

    专利类型

  • 公开/公告日1988-09-27

    原文格式PDF

  • 申请/专利权人 UNIVERSITY OF GUELPH;

    申请/专利号CA19840453566

  • 发明设计人 COCIVERA MICHAEL;

    申请日1984-05-04

  • 分类号C25D5/50;

  • 国家 CA

  • 入库时间 2022-08-22 06:57:02

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号