Properties of Ni doped and Ni-Ga co-doped ZnO thin films prepared by pulsed laser deposition

摘要

ZnNiO and Zn(Ni,Ga)0 thin films were prepared on glass substrates by pulsed laser deposition. The obtained films are of good crystal quality and have smooth surfaces, which have a hexagonal wurtzite ZnO structure with a highly c-axis orientation without any Ga or Ni related phases. Hall-effect measurements showed that the ZnNiO film is n-type, in which the carrier concentration would be greatly enhanced by the addition of Ga. Room temperature ferromagnetism is observed for the ZnNiO and Zn(Ni,Ga)0 films. The addition of Ga into the ZnNiO films increases the electron concentration but weakens the room temperature ferromagnetism.