Preparation and electrical properties of Pb(Zr_(0.52)Ti_(0.48))O_3 thick films embedded with ZnO nanowhiskers by a hybrid sol-gel route

摘要

Pb(Zr_(0.52)Ti_(0.48) )O_3 thick films embedded with ZnO nanowhiskers (ZnO_w-PZT) were successfully prepared on Pt/Cr/SiO_2/Si substrates by a hybrid sol-gel method via spin-coating ZnO_w suspension and PZT sol. Effects of annealing time and thickness on the corresponding orientation and crystallization of ZnO_w-PZT films are investigated. XRD and SEM results show that ZnO_w-PZT composite thick films have perovskite structure and high-quality film surface. The composite thick films also exhibit good ferroelectric and dielectric properties, which are close to those of PZT thick films. The remanent polarization, coercive field, dielectric constant and dielectric loss of ZnO_w-PZT thick film with thickness of 2 ìm are 24 ìC/cm~2, 177kV/cm, 223 and 0.06, respectively. Moreover, the longitudinal piezoelectric coefficient is calculated to be 35 pm/V, which is comparable to that of PZT thick film.